| PART |
Description |
Maker |
| FM21LD16-60-BG FM21LD16-60-BGTR |
2Mbit F-RAM Memory
|
Cypress Semiconductor
|
| STLC5432 STLC5432Q |
2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M28W201 |
2Mbit (256Kb x8, Bulk) Low Voltage Flash memory(2Mb低压闪速存储器)
|
意法半导
|
| LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory 16兆（容量Mbit × 16Mbit的8V单电压闪
|
Sharp, Corp.
|
| V54C365804VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| M27W201 |
2Mbit (256Kb x 8) Low Voltage OTP EPROM(2Mb低压OTP EPROM)
|
意法半导
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8 高性能2.5米8 DDR SDRAM银行X 2Mbit的8
|
Mosel Vitelic, Corp.
|
| SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-PH |
From old datasheet system
SST29SF512/010/020/040, SST29VF512/010/020/040 512Kbit/ 1Mbit/ 2Mbit/ 4Mbit (x8) Small-Sector Flash
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| AM29F002BT-90ED AM29F002BB-70ED AM29F002NBB-70PD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
256K X 8 FLASH 5V PROM, 70 ns, PDSO32
Flash Memory IC; Package/Case:32-DIP; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
|
SPANSION LLC
|
